MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA TO-263AB (D2PAK) Case: TO-263AB (D2PAK) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Weight: 1.37 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) MBRS MBRS MBRS MBRS MBRS MBRS MBRS PARAMETER SYMBOL 1035 1045 1050 1060 1090 10100 10150 CT CT CT CT CT CT CT Unit Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM 1 A Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25 IF= 5 A, TJ=125 IF= 10 A, TJ=25 IF= 10 A, TJ=125 Maximum reverse current @ rated VR TJ=25 TJ=100 TJ=125 Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF 0.70 0.80 0.85 0.88 0.57 0.65 0.75 0.78 0.80 0.90 0.95 0.98 0.67 0.75 0.85 0.88 V 0.1 IR 15 10 5 dV/dt mA 10000 V/s O RJC 2 TJ - 55 to +150 O C - 55 to +150 O C TSTG Note 1: tp = 2.0 s, 1.0KHz Note 2: Pulse test with PW=300s, 1% duty cycle Document Number: DS_D1309057 Version: I13 C/W MBRS1035CT thru MBRS10150CT Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE QUALIFIED MBRS10xxCT (Note 1) GREEN COMPOUND PACKAGE PACKING D2PAK 800 / 13" Paper reel CODE RN Prefix "H" Suffix "G" C0 2 50 / Tube D PAK Note 1: "xx" defines voltage from 35V (MBRS1035CT) to 150V (MBRS10150CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. PACKING CODE MBRS1060CT RN MBRS1060CT RN MBRS1060CT RNG MBRS1060CT RN MBRS1060CTHRN MBRS1060CT QUALIFIED H GREEN COMPOUND CODE G DESCRIPTION Green compound RN AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 10 8 6 4 2 RESISTIVE OR INDUCTIVELOAD 0 50 60 70 80 90 100 110 120 130 140 150 180 PEAK FORWARD SURGE CURRENT (A) 12 8.3ms Single Half Sine Wave JEDEC Method 150 120 90 60 30 0 1 10 FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 10 MBRS1050CT-1060CT 1 MBRS10150CT INSTANTANEOUS REVERSE A CURRENT (mA) TJ=125 MBRS1035CT-1045CT INSTANTANEOUS FORWARD A CURRENT (A) 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) 10 1 TJ=75 0.1 0.01 TJ=25 MBRS1090CT-10100CT 0.001 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1309057 1 1.1 1.2 1.3 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: I13 MBRS1035CT thru MBRS10150CT Taiwan Semiconductor FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE (pF) A 900 TRANSIENT THERMAL IMPEDANCE A (/W) 1000 f=1.0MHz Vsig=50mVp-p 800 700 10 600 500 400 300 200 100 1 0.1 0 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 10.8 0.425 B 8.3 0.327 C 1.1 0.043 D 3.5 0.138 E 16.9 0.665 F 9.5 0.374 G 2.5 0.098 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309057 Version: I13 MBRS1035CT thru MBRS10150CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309057 Version: I13